Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 30: Focus Session: Emerging oxide semiconductors II (jointly with HL, DF, O)

DS 30.5: Talk

Wednesday, April 2, 2014, 16:15–16:30, POT 081

Sputtered SnO₂ degenerately doped with Ta or Sb - A comparative study for applications in transparent electronics — •Mirko Weidner and Andreas Klein — Technische Universität Darmstadt

In the emerging field of transparent electronics, indium oxide doped with tin (ITO) is still the predominately used electrode material, due to its high conductivity at low deposition temperatures. Due to the relative scarcity and high cost of Indium, alternatives are highly sought after. Tin oxide (SnO₂) is one of the few other materials that combine the properties of optical transparency and electrical conductivity. The material may serve as a transparent electrode in optoelectronic devices such as displays, touch screens, LEDs and thin film solar cells. In recent years, SnO₂ doped with Tantalum (TTO) has been shown to be a valid alternative to the established SnO₂ systems doped with Fluorine (FTO) or Antimony (ATO). However, little work has been published on the material, and thus far the question as to why Tantalum doping can yield better electrical conductivity than Antimony doping has not been raised or answered.
In this study, TTO and ATO thin films where sputter-deposited and characterized under similar conditions to maximize comparability between the two materials. Characterization of electrical conductivity and optical transmissivity was complimented by probing the materials’ electronic structure by in-situ Photoelectron Spectroscopy (XPS/UPS) of the sample surfaces and by structural characterization by AFM and XRD.