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DS: Fachverband Dünne Schichten

DS 32: Focus session: Resistive Switching by Redox and Phase Change Phenomena III (Defect and material engineering in oxides)

DS 32.1: Vortrag

Mittwoch, 2. April 2014, 15:00–15:15, CHE 89

Towards selective ion beam modification of vanadium dioxide — •Jura Rensberg, Ronny Nawrodt, Sebastian Vatterodt, Jana Sommerfeld, Alexander von Müller, and Carsten Ronning — Institut of Solid State Physics, Friedrich Schiller University Jena, Germany

Vanadium dioxide VO₂ undergoes a metal-insulator transition (MIT) at a critical temperature of about 68^∘C. The MIT induces significant changes in electrical, optical and structural properties making VO₂ thin films promising for integrated devices as switches, sensors, and memories. The critical temperature can be decreased by doping with electron donors like tungsten. However, doping of VO₂ thin films during growth is limited to vertical incorporation of dopant profiles. In contrast, ion beam doping allows also for lateral doping using suitable masking technique. Furthermore, the dopant concentration and implantation depth can be well controlled. The major disadvantage of doping by ion implantation is the creation of irradiation damage, making in-situ or post implantation annealing necessary. Here we report on noble gas ion irradiation of VO₂ thin films. Damage formation was studied using Rutherford backscattering spectrometry. Electrical and optical measurements were performed in order to investigate the change of MIT properties. It was found that damage formation leads to a degradation of MIT properties. Irradiation at higher temperatures utilizing dynamic annealing is not applicable due to oxygen out-diffusion in high-vacuum. Furthermore, post implantation annealing studies will be discussed in this contribution.