Dresden 2014 – scientific programme
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DS: Fachverband Dünne Schichten
DS 32: Focus session: Resistive Switching by Redox and Phase Change Phenomena III (Defect and material engineering in oxides)
DS 32.3: Talk
Wednesday, April 2, 2014, 15:30–15:45, CHE 89
Defects behavior in HfO2-based resistive switching devices — •Małgorzata Sowińska1, Thomas Bertaud1, Damian Walczyk1, Andrei Gloskovskii2, Pauline Calka1, Lambert Alff3, Christian Walczyk1, and Thomas Schroeder1,4 — 1IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — 2P09 beamline at Petra III (DESY), Notkestrasse 85, 22607 Hamburg, Germany — 3Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt, Germany — 4Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus, Germany
In-operando hard X-ray photoelectron spectroscopy (HAXPES)[1,2] is applied to non-destructively study the influence of current compliance and switching cycles on the Ti/HfO2 interface chemistry and physics of resistive switching Ti/HfO2/TiN cells. The HAXPES studies confirm theoretical results that current compliance is a crucial parameter to create a critical amount of oxygen vacancies in order to achieve stable resistive switching. Furthermore, HAXPES clearly detects an interface segregation of carbon impurities from the HfO2 film towards the Ti/HfO2 interface under electrical stress by current compliance and over the cycling. As carbon impurities may thus alter the oxygen vacancy defect balance in the HfO2 film during resistive switching, materials engineering approaches need to include all major impurities in the dielectric to achieve reproducible and reliable resistive random access memory performance.
[1] M. Sowinska et al., Appl. Phys. Lett. 100, 233509 (2012).
[2] T. Bertaud et al., Appl. Phys. Lett. 101,143501 (2012).