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15:00 |
DS 32.1 |
Towards selective ion beam modification of vanadium dioxide — •Jura Rensberg, Ronny Nawrodt, Sebastian Vatterodt, Jana Sommerfeld, Alexander von Müller, and Carsten Ronning
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15:15 |
DS 32.2 |
Towards forming free switching in HfO2−x/TiN thin films grown by molecular beam epitaxy — •S Ulhas Sharath, Thomas Bertaud, Jose Kurian, Erwin Hildebrandt, Christian Walczyk, Pauline Calka, Peter Zaumseil, Malgorzata Sowinska, Damian Walczyk, Andrei Gloskovskii, Thomas Schroeder, and Lambert Alff
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15:30 |
DS 32.3 |
Defects behavior in HfO2-based resistive switching devices — •Małgorzata Sowińska, Thomas Bertaud, Damian Walczyk, Andrei Gloskovskii, Pauline Calka, Lambert Alff, Christian Walczyk, and Thomas Schroeder
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15:45 |
DS 32.4 |
Oxygen engineered HfO2−x as a CMOS compatible candidate for resistive switching — •Erwin Hildebrandt, S. U. Sharath, Jose Kurian, Mathis M. Mueller, Thomas Schroeder, Hans-Joachim Kleebe, and Lambert Alff
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16:00 |
DS 32.5 |
Resistive switching of flash lamp crystallized YMnO3 thin films prepared on Pt/Ti/SiO2/Si substrates by low-temperature pulsed laser deposition — •Agnieszka Bogusz, Sławomir Prucnal, Wolfgang Skorupa, Daniel Blaschke, Barbara Abendroth, Hartmut Stöcker, Ilona Skorupa, Danilo Bürger, Oliver G. Schmidt, and Heidemarie Schmidt
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16:15 |
DS 32.6 |
Resistive Switching in TiO2: Comparison of thermally oxidized and magnetron sputtered films — •Daniel Blaschke, Steffen Cornelius, Peter Zahn, Sibylle Gemming, Ilona Skorupa, Bernd Scheumann, Andrea Scholz, and Kay Potzger
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