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DS: Fachverband Dünne Schichten

DS 33: Focus session: Resistive Switching by Redox and Phase Change Phenomena IV (Kinetic in oxides and phase change)

DS 33.3: Vortrag

Mittwoch, 2. April 2014, 17:15–17:30, CHE 89

Doping and resistive switching effects induced by carrier injection in high temperature superconductors — •Irina Lazareva¹, Yilmaz Simsek¹, Yury Koval¹, Paul Müller¹, Sabine Wurmehl², Bernd Büchner², Tobias Stürzer³, and Dirk Johrendt³ — ¹Universität Erlangen-Nürnberg, Erlangen, Deutschland — ²IFW, Dresden, Deutschland — ³LMU, München, Deutschland

Doping by current injection was investigated in various high temperature superconductors. Only by injection of large currents along the c-axis we were able to change carrier concentration in Bi₂Sr₂CaCu₂O_8+δ cuprate as well as in LaO_1−xF_xFeAs and Ca₁₀(FeAs)₁₀(Pt₄As₈) pnictides. The doping effect is persistent and reversible resembling the resistive-memory switching phenomena observed in various oxides. The mutual influence of chemical doping and change of the charge carrier concentration by current injection is analyzed. The general tendency of carrier doping by trapped electrons is discussed.