DS 33: Focus session: Resistive Switching by Redox and Phase Change Phenomena IV (Kinetic in oxides and phase change)
Wednesday, April 2, 2014, 16:45–18:15, CHE 89
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16:45 |
DS 33.1 |
Evidence for power-dependent SET kinetics in valence change memories — •Stephan Menzel, Karsten Fleck, Ulrich Böttger, and Rainer Waser
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17:00 |
DS 33.2 |
Memristive tunnel junctions — •Mirko Hansen, Martin Ziegler, and Hermann Kohlstedt
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17:15 |
DS 33.3 |
Doping and resistive switching effects induced by carrier injection in high temperature superconductors — •Irina Lazareva, Yilmaz Simsek, Yury Koval, Paul Müller, Sabine Wurmehl, Bernd Büchner, Tobias Stürzer, and Dirk Johrendt
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17:30 |
DS 33.4 |
Optical and structural dynamics of the phase transition of GST phase change materials — •Lutz Waldecker, Timothy Miller, Roman Bertoni, Simon Wall, and Ralph Ernstorfer
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17:45 |
DS 33.5 |
Ab initio molecular dynamics simulations of crystallization of AIST — •Wei Zhang, Ider Ronneberger, Peter Zalden, Martin Salinga, Matthias Wuttig, and Riccardo Mazzarello
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18:00 |
DS 33.6 |
Ab initio metadynamics simulation of phase change materials — •Ider Ronneberger, Wei Zhang, and Riccardo Mazzarello
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