Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 34: Focus Session: Resistive Switching by Redox and Phase Change Phenomena V (Structure, growth and general properties of PC materials)

DS 34.2: Vortrag

Mittwoch, 2. April 2014, 19:00–19:15, CHE 89

Application of the Mössbauer effect in Ge-Sb-Te and Sn-Sb-Te phase change materials — •Ronnie Ernst Simon^1,2, Ilya Sergueev³, and Raphaël Pierre Hermann^1,2 — ¹Jülich Centre for Neutron Science JCNS and Peter Grünberg Institut PGI, Jara-FIT Forschungszentrum Jülich GmbH, D-52425 Jülich Germany — ²Faculté des Sciences, Université de Liège, B-4000 Liège, Belgium — ³Deutsches Elektronen-Synchrotron, D-22607 Hamburg, Germany

Phase change materials exhibit a significant change of the electrical resistivity upon crystallization which renders these materials promising candidates for resistive switches and non-volatile electronic memories. In order to understand the switching mechanism between the amorphous and crystalline phases a detailed knowledge of the structure on a microscopic scale is crucial. Mössbauer spectroscopy and nuclear forward scattering of synchrotron radiation which are both based on the application of the Mössbauer effect are suitable techniques for local structure investigations. We performed conventional ¹²¹Sb Mössbauer spectroscopy and ⁷³Ge and ¹¹⁹Sn nuclear forward scattering measurements in Ge-Sb-Te and Sn-Sb-Te phase change materials in order to study hyperfine interactions. Measurements were performed as a function of temperature, stoichiometry and crystallinity and reveal valence changes upon crystallization. The DESY (Petra III, P01) and ESRF (ID18) are acknowledged for the provision of beamtime.