Dresden 2014 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 34: Focus Session: Resistive Switching by Redox and Phase Change Phenomena V (Structure, growth and general properties of PC materials)
DS 34.4: Vortrag
Mittwoch, 2. April 2014, 19:30–19:45, CHE 89
Metal Organic Chemical Vapour Deposition of monocrystalline Ge1 Sb2 Te4 (GST) and Sb2 Te3 — •Martin Schuck1,2, Sally Rieß1,2, Marcel Schreiber1,2, Gregor Mussler1,2, Toma Stoica1,2, Hilde Hardtdegen1,2, and Detlev Grützmacher1,2 — 1Peter Grünberg Institut 9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2JARA - Fundamentals of Future Information Technology
GST is considered as one of the most promising materials for non-volatile phase-change memories. The phase change between its amorphous and crystalline phase is switched by current pulses of different intensity and duration. For this application the alloys along the GeTe − Sb2 Te3 pseudobinary are the most suitable, since they are characterized by fast switching speed and high scalability. Their crystallization characteristics are determined by their composition, which therefore needs to be controlled.
Here we present the MOCVD growth of Ge1 Sb2 Te4 (GST) and Sb2 Te3 on Si(111) substrates using triethylantimony (TESb), diethyltelluride (DETe) and digermane as precursors and pure N2 as the carrier gas. A systematic variation of reactor pressure and growth temperature was carried out to obtain crystalline flat layers of only one composition. The deposited material was characterized by means of X-Ray Diffraction, Raman spectroscopy, atomic force and scanning electron microscopy. It was found that, depending on the growth temperature, at low reactor pressure only 2 alloys were found: Ge1 Sb2 Te4 (GST) and Sb2 Te3. The study on the influence of the growth parameters on material properties will be presented.