DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2014 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 34: Focus Session: Resistive Switching by Redox and Phase Change Phenomena V (Structure, growth and general properties of PC materials)

Wednesday, April 2, 2014, 18:30–20:00, CHE 89

18:30 DS 34.1 Invited Talk: Materials engineering for phase change memory — •Simone Raoux and Huai-Yu Cheng
19:00 DS 34.2 Application of the Mössbauer effect in Ge-Sb-Te and Sn-Sb-Te phase change materials — •Ronnie Ernst Simon, Ilya Sergueev, and Raphaël Pierre Hermann
19:15 DS 34.3 Atomic resolution investigation of defect structures in textured metastable Ge2Sb2Te5 by aberration corrected high resolution STEM — •Ulrich Roß, Andriy Lotnyk, Erik Thelander, and Bernd Rauschenbach
19:30 DS 34.4 Metal Organic Chemical Vapour Deposition of monocrystalline Ge1 Sb2 Te4 (GST) and Sb2 Te3 — •Martin Schuck, Sally Rieß, Marcel Schreiber, Gregor Mussler, Toma Stoica, Hilde Hardtdegen, and Detlev Grützmacher
19:45 DS 34.5 Thermal annealing studies on GeSbTe alloy-films grown on Si(111) by Molecular Beam Epitaxy — •Valeria Bragaglia, Rui Ning Wang, Jos Boschker, and Raffaella Calarco
100% | Mobile Layout | Deutsche Version | Contact/Imprint/Privacy
DPG-Physik > DPG-Verhandlungen > 2014 > Dresden