Dresden 2014 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials
DS 35.10: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
Spinel based magnetic tunnel junctions — •Torsten Hübner — Universität Bielefeld — Thin Films and Physics of Nanostructures
Using MgAl2O4 instead of MgO as barrier material in magnetic tunnel junctions has attracted some attention due to its small lattice mismatch of ∼1% with regard to standard ferromagnetic electrodes. The Δ1 symmetry filter effect, which is responsible for the huge TMR effect in MgO based magnetic tunnel junctions, is also predicted for MgAl2O4 tunnel barriers1. Additionally, MAO barriers achieved a Vhalf twice as much as MgO ones, which makes them even more interesting for spintronic devices and applications2. We fabricated CoFeB/MgAl2O4/CoFeB exchange biased magnetic tunnel junctions via rf sputtering of a pure MAO target. A TMR effect of more than 30% was achieved reproducibly as well as a comparatively high area resistance product in the range of several kΩ µm2. In conclusion, MAO barriers require continuing research in order to take advantage of their potentially superior properties. 1Zhang et al., Appl. Phys. Lett. 100, 222401 (2012) 2Sukegawa et al., Appl. Phys. Lett. 96, 212505 (2010)