Dresden 2014 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials
DS 35.11: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
Dielectric constants of polycrystalline (Ba,Sr)TiO3 (BSTO) films — •Xueyong Yuan1, Tiangui You1, Varun John1, Sabine Engelmann1, Ilona Skorupa1,2, Danilo Bürger1, Heidemarie Schmidt1, Daniel Grimm1, and Oliver G. Schmidt1,3 — 1Material Systems for Nanoelectronics, Chemnitz University of Technology — 2Helmholtz-Zentrum Dresden-Rossendorf e.V — 3IFW Dresden, Institute for Integrative Nanosciences
The dielectric constant for SrRuO3/30nm thick Bal-xSrxTiO3/SrRuO3 all oxide capacitor was measured to be 550, which corresponds to an equivalent SiO2 thickness of 0.21 nm [1]. Although the leakage current of epitaxially-grown BSTO films is small compared to polycrystalline BSTO films, the low-cost polycrystalline capacitors are widely used in modern semiconductor technology. We studied the frequency dependent electrical polarization of polycrystalline BSTO films which have been grown by pulsed laser deposition (PLD) on large scale Pt bottom electrodes as a function of PLD growth conditions in the test frequency range from 100 Hz to 1 MHz. Most BSTO films reveal the expected constant bulk dielectric constant of around 20. Here the focus is on selected BSTO films which show a relatively high dielectric constant in the low frequency range up to 100 kHz. A model which considers the occupancy of bulk traps in insulators [2] is used to explain the frequency dependent capacitance of polycrystalline BSTO.
References [1] N. Fukushima et al. 493, 1997. [2] Y. Yuan et al. IEEE Trans. on Electron Devices, 59, 2012.