Dresden 2014 – scientific programme
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DS: Fachverband Dünne Schichten
DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials
DS 35.20: Poster
Wednesday, April 2, 2014, 17:00–20:00, P1
Interaction of gold nanoparticles with wafer-level integrated carbon nanotubes probed by Raman spectroscopy — •Raul D. Rodriguez1, Jana Kalbacova1, Thomas Blaudeck2, Sascha Hermann2, Parisa Bayat1,2, David Adner3, Heinrich Lang3, Stefan E. Schulz2,4, and Dietrich R.T. Zahn1 — 1Semiconductor Physics, Technische Universität Chemnitz, 09107 Chemnitz, Germany — 2Center for Microtechnologies (ZfM), Technische Universität Chemnitz, 09107 Chemnitz, Germany — 3Faculty of Natural Sciences, Institute of Chemistry, Inorganic Chemistry, Technische Universität Chemnitz, 09107 Chemnitz, Germany — 4Fraunhofer Institute for Electronic Nanosystems (ENAS), 09126 Chemnitz, Germany
By means of Raman spectroscopy we aim at determining the effect of gold nanoparticle decoration on single-walled carbon nanotubes (CNT) in a field effect transistor configuration (CNT-FET). The experiments were performed under green laser excitation (514.7 nm) focused by a 100x objective giving a power below 150 µW on the sample and spatial resolution below 500 nm. The spectral resolution allowed detecting changes in the Raman spectra with accuracy as low as 0.6 cm−1. It was found from the analysis of the radial breathing mode (RBM) that small diameter CNT are preferentially affected by the decoration process while no significant increase in defect concentration was observed from the intensity ratio of the D and G bands. This suggests an optimal way of achieving functionalized CNT-FET devices without degrading its electronic properties but preserving the CNT crystallinity and sp2 nature.