Dresden 2014 – scientific programme
Parts | Days | Selection | Search | Updates | Downloads | Help
DS: Fachverband Dünne Schichten
DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials
DS 35.23: Poster
Wednesday, April 2, 2014, 17:00–20:00, P1
Characterization of integrated single-walled carbon nanotubes by transmission electron microscopy — •Martin Hartmann1, Sascha Hermann1, and Stefan Schulz1,2 — 1TU Chemnitz, Center for Microtechnologies (ZfM), 09126 Chemnitz, Germany — 2Fraunhofer Institute for Electronic Nano Systems (ENAS), 09126 Chemnitz, Germany
There is a strong interest in using single-walled carbon nanotube (SWCNTs) as ultrasensitive piezoresistive sensor element. For this kind of applications the knowledge of SWCNT properties and its environment are of crucial importance for understanding the device performance and for technology development. In our work we are particularly interested in effects of different process steps along a waferlevel technology for the fabrication of micro or nano electro mechanical devices (MEMS or NEMS) with integrated piezoresistive SWCNT sensors.
Therefore we present studies with a test structure which allows us to use transmission techniques such as transmission electron microscopy (TEM) to get profound information about chirality, defects and impurities introduced during the integration process of the SWCNTs. With a minimal invasive method, this test structure was dissected from a wafer-level processed sample with the focused ion beam (FIB) method. We present first results of a TEM investigation, which integrated SWCNTs between two electrodes of a MEMS structure. Moreover we present an approach for a systematic TEM characterization of a large amount of structures with integrated SWCNTs without using the time-consuming FIB method.