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DS: Fachverband Dünne Schichten

DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials

DS 35.2: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Ferromagnetic InMnAs prepared by Ion implantation and pulsed laser annealing — Ye Yuan¹, •Yutian Wang¹, Kun Gao¹, Muhammad Khalid¹, Eugen Weschke², Wolfgang Skorupa¹, Manfred Helm¹, and Shengqiang Zhou¹ — ¹Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden, Germany — ²Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein-Straße 15, D-12489 Berlin, Germany

Ferromagnetic InMnAs has been previously prepared by low temperature MBE. In this contribution, we present an alternative method what combines Mn ion implantation and pulsed laser annealing to achieve In1-xMnxAs (x = 0.04 and 0.08) [1], and to obtain a remarkably high Curie Temperature (TC) up to 80 K compared to InMnAs with the same Mn concentration as prepared by MBE. The advantage of pulsed laser annealing is its high process temperature within the nano-second range, eliminating n-type defects which can decrease its magnetization and TC. The saturation magnetization is ~2.6μB / Mn by consideration of all implanted Mn ions. The out-of-plane [001] is the easy axis displaying a nearly square like hysteresis loop. Our results suggest that InMnAs prepared by ion implantation and pulsed laser annealing shows a promising prospect to get high TC DMS after optimizing the preparation parameters.

1) S. Zhou, et al. :Appl. Phys. Express 5 (2012) 093007