Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials

DS 35.31: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Dry transfer method for CVD-graphene using hexagonal Boron Nitride — •Luca Banszerus¹, Michael Schmitz¹, Kenji Watanabe², Takashi Taniguchi², and Christoph Stampfer³ — ¹JARA-FIT and II. Institute of Physics, RWTH Aachen University, 52074 Aachen, Germany — ²National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan — ³Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, 52425 Jülich

Growing graphene on copper, using chemical vapor deposition is a promising technique allowing to produce high quality single crystals on large areas. However, recent results have shown that surface contamination by ionic substances and polymer residues substantially lower the quality of the grown graphene. In this work we present a novel transfer method where, in contrast to the common transfer technique, the graphene does not come into contact with any polymer or ionic substances. In a first step we grow graphene single crystals on copper with diameters of up to 400 µm. The graphene is then lifted off the copper with hexagonal boron nitride (hBN), using a van der Waals-pick up technique. Subsequently, the flakes are transferred to SiO₂ or hBN and are characterized using Raman spectroscopy. The Raman spectra show a low D-peak amplitude together with a ratio of G/2D of up to 10 and a G-Peak position around 1583cm⁻¹ suggesting a high crystal quality and a low doping concentration. Our novel technique additionally allows us to transfer high quality CVD grown graphene from copper onto arbitrary substrates, which makes it potentially interesting for a number of scalable applications.