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DS: Fachverband Dünne Schichten

DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials

DS 35.32: Poster

Wednesday, April 2, 2014, 17:00–20:00, P1

Raman Spectroscopy of Few-Layer Graphene after Oxygen Plasma Etching — •Mahsa Zoraghi, Jose Barzola-Quiquia, and Pablo Esquinazi — Division of Superconductivity and Magnetism, University of Leipzig, D-04103 Leipzig, Germany

The purpose of this study was to obtain few-layer graphene (FLG) samples of tens of nanometer thickness, from graphite flakes (GF) of 100 nm thickness. Rubbing process is used to prepare FLG samples on the top of isolating substrates. Using this method, GF and FLG samples can be produced without disorder according to Raman measurements. Oxygen plasma etching technique is used at room temperature to reduce the thickness of GF samples and also to study how obtained FLG samples are affected by etching process. Thickness variations can be measured by atomic force microscopy (AFM) after etching process. Raman spectroscopy was used to characterize the possible defects in FLG samples produced by oxygen plasma etching. As the Raman spectroscopy results indicated, we learned that by rubbing method, we do not produce defects in the GF sample however, oxygen plasma etching does. The temperature dependence of the electrical resistance of FLG samples before and after oxygen plasma treatment was also studied.