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DS: Fachverband Dünne Schichten
DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials
DS 35.33: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
Charge transport in graphene and nitrogen-doped graphene — •Fabienne Musseau1, Markus Rein1, Nils Richter1, Khaled Parvez2, Hermann Sachdev2, Mathias Kläui1, and Klaus Müllen2 — 1Institut für Physik, Johannes Gutenberg-Universität Mainz, Mainz, Germany — 2Max Planck Institute for Polymer Research Mainz, Mainz, Germany
Graphene is a promising candidate for replacing silicon-based transistors due to its two-dimensional structure and high charge carrier mobilities. To this end it is necessary to engineer the band gap in this carbon-based material. One strategy to overcome this problem is the intentional doping of graphene.
Our work is based on a comparison between undoped and nitrogen-doped single graphene layer grown by chemical vapour deposition (CVD) on copper foils. First Raman spectroscopy was used to characterize the samples. Electrical measurements were performed at variable temperatures down to 2.3 K and at variable magnetic field perpendicular to the plane up to 8 T.
The behaviour of undoped samples is comparable to what was previously found in CVD grown graphene, including mobilities of around 1100 cm*/Vs and weak localisation at low temperatures. For the doped samples, the charge carrier concentration is significantly higher than in undoped cases, indicating an effective doping. Furthermore a negative magnetoresistance is observed in the range of -8 T to +8 T, which is not found for undoped graphene.