Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials

DS 35.34: Poster

Wednesday, April 2, 2014, 17:00–20:00, P1

Hyperdoping Si with deep level impurities by ion implantation and short-time annealing — •Fang Liu, Slawomir Prucnal, Kun Gao, Muhammad Khalid, Wolfgang Skorupa, Manfred Helm, and Shengqiang Zhou — Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden, Germany

It has been proposed that deep level impurities, such as Titanium (Ti) or chalcogens in Si, can induce an impurity band inside the bandgap at high enough doping concentration [1, 2]. The insertion of an impurity band can enhance the absorption at a broader wavelength range and leads to as applications in the so-called intermediate band solar cell [3]. In the present work, we are using ion implantation combined with short-time annealing to realize hyperdoping of Ti and chalcogens in Si. Our results show that the implanted Si layer can be recrystallized by both flashlamp and pulsed laser annealing. Ti ions mainly occupy the interstitial sites, while S and Se ions substitute the Si in the lattice. The consequent changes in electrical properties are also observed. [1] J. Olea, et al., J. Appl. Phys. 109, 063718 (2011). [2] B. P. Bob, et al., J. Aziz J. Appl. Phys. 107, 123506 (2010) [3] A. Luque and A. Martí, Phys. Rev. Lett. 78, 5014 (1997).