Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials

DS 35.38: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Morphological heterogeneities of chemically exfoliated GaSe flakes and their impact on photoluminescence and Raman spectra — •Susanne Müller¹, Raul D. Rodriguez¹, Alexander Villabona^1,2, Tao Zhang³, Ihsan Amin³, Rainer Jordan³, Santos A. Lopez-Rivera², and Dietrich R.T. Zahn¹ — ¹Semiconductor Physics, Technische Universität Chemnitz, 09107 Chemnitz, Germany — ²Universidad de Los Andes, Applied Physics Lab, Merida 05101, Venezuela — ³Professur für Makromolekulare Chemie, Department Chemie, Technische Universität Dresden, Mommsenstraße 4, 01069 Dresden, Germany

Gallium selenide (GaSe) is a two-dimensional material with a high anisotropy of the electrical and optical properties, which makes this material interesting for optoelectronic applications. We are interested in investigating the dependence of both Raman and photoluminescence (PL) spectra on the thickness and the morphology of GaSe flakes.

Therefore, we deposited chemically exfoliated GaSe flakes on highly oriented pyrolytic graphite. Raman spectra measured on GaSe flakes match bulk GaSe spectra, thus they were not modified by the preparation procedure. The thickness and morphology of the same flakes, where PL and Raman spectra were obtained, were determined by atomic force microscopy. We observed that the PL peak position varies for different flake thicknesses. We discuss the correlation of the flake orientation with respect to the polarization of incident light and the PL peak position. Furthermore, we can see that some of the typical bulk GaSe Raman modes vanish for some flakes.