Dresden 2014 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials
DS 35.41: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
Electrical Properties of turbostratically disordered [(SnSe)1.15]m(VSe2)n misfit layer compounds — •Andreas Fiedler1, Corinna Grosse1, Ryan Atkins2, David C. Johnson2, and Saskia F. Fischer1 — 1Novel Materials, Department of Physics, Humboldt-Universität zu Berlin, 10099 Berlin, Germany — 2Department of Chemistry, University of Oregon, Eugene OR 97401-3753, USA
Progress in materials science depends on the ability to discover novel materials and to investigate and understand their properties. The [(SnSe)1+x]m[VSe2]n ferecrystals are novel materials containing turbostratically disordered layers of SnSe and VSe2. The aim of this study is to investigate the influence of the stacking sequence on the electrical properties. Therefore, these ferecrystals were electrically characterized by determining the in-plane resistivity and Hall coefficient between 4.2 K and 300 K, using the van der Pauw method. Assuming a single-band model, an increase in resistivity and a decrease in carrier concentration was observed for the [(SnSe)1+x]m[VSe2]1 ferecrystals with m=1,2,3 and 4, below an onset temperature between 100 K and 150 K. This is consistent with a localization of charge carriers, when, for example, a charge-density-wave (CDW) forms. The electrical measurements imply that it is possible to tailor the electrical properties of these ferecrystals by varying the stacking sequence, as the onset temperature increases with increasing m.
[1] Atkins, R. et al.: J. Solid State Chem. 202, 128 – 133, (2013).