DPG Phi
Verhandlungen
Verhandlungen
DPG

Dresden 2014 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials

DS 35.47: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Organic lateral spin devices fabricated by trench technology — •Sreetama Banerjee1,2, Peter Richter1, Danny Reuter2,3, Karla Hiller2, Thomas Gessner2,3, Dietrich R.T. Zahn1, and Georgeta Salvan11Institute of Physics, Technische Universität Chemnitz, Germany — 2Centre for Microtechnologies, Technische Universität Chemnitz, Germany — 3Fraunhofer Institute ENAS, Chemnitz, Germany

Organic semiconductors are considered as attractive materials for spintronic applications. One of the current challenges in this field resides in the cost-effective fabrication of devices with laterally stacked electrodes and their integration at the wafer level. In this work lateral devices with electrodes separated by sub-100 nm gaps were fabricated using conventional UV lithography combined with semiconductor processing. Following a metallization step for the preparation of Au or Co electrodes, organic films were evaporated in high vacuum. Typically an average film thickness of 350 nm was required to form a nanomembrane that closes the gap between the electrodes. These structures allow the systematic investigation of electric and magnetoresistive properties of diamagnetic and paramagnetic organic semiconductor materials (in this case Alq3 and cobalt phthalocyanine) as a function of the width of the electrode gap. These devices are intended to be used in magnetoresistive devices and molecular spintronics.

100% | Mobil-Ansicht | English Version | Kontakt/Impressum/Datenschutz
DPG-Physik > DPG-Verhandlungen > 2014 > Dresden