Dresden 2014 – scientific programme
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DS: Fachverband Dünne Schichten
DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials
DS 35.52: Poster
Wednesday, April 2, 2014, 17:00–20:00, P1
Topography-Controlled Alignment of DNA Origami Nanotubes on Nanopatterned Surfaces — •Bezuayehu Teshome1,2, Stefan Facsko1, and Adrian Keller1 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, 01328 Dresden, Germany — 2Technische Universität Dresden, Mommsenstraße 13, 01069 Dresden, Germany
The controlled positioning of DNA nanostructures on technologically-relevant surfaces represents a major goal along the route toward the full-scale integration of DNA-based materials into nanoelectronic and sensoric devices. Previous attempts to arrange DNA nanostructures into defined arrays mostly relied on top-down lithographic patterning techniques combined with chemical surface functionalization.
Here we combine two bottom-up techniques for nanostructure fabrication, i.e., self-organized nanopattern formation and DNA origami self-assembly, in order to demonstrate the electrostatic self-alignment of DNA nanotubes on topographically patterned silicon surfaces. Self-organized nanoscale ripple patterns with periodicities ranging from 20 nm to 50 nm are fabricated by low-energy ion irradiation and serve as substrates for DNA origami adsorption. Electrostatic interactions with the charged surface oxide during adsorption direct the DNA origami nanotubes to the ripple valleys and align them parallel to the ripples. By optimizing the pattern dimensions and the Debye length of the adsorption buffer, we obtain an alignment yield of ~ 70 %.