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DS: Fachverband Dünne Schichten
DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials
DS 35.55: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
Evolution of nanostructures induced by low energy ion sputtering on Si surfaces — •Kun Zhang, Hans Hofsäss, and Omar Bobes — II. Physikalisches Institut, Universität Göttingen, Göttingen, Germany
In order to study the allotropic effect on ripple formation on silicon surfaces induced by ion-beam sputter erosion, three types of silicon materials, single crystalline silicon, amorphous silicon grown with evaporation and amorphous silicon produced with ion irradiation, were irradiated with 1-keV Ar+ ions at incidence angles from 30∘ to 87∘. The ion fluence was 2 x 1017 /cm2 for all irradiations. No ripples were formed for incidence angles smaller than 60∘ for all three materials, while perpendicular ripples occurred only in amorphous silicon at incidence angles between 82∘ and 85∘. The presented results show, that ripple formation is influenced by the underlying silicon material, which reveal different atom densities depending on the growth of the Si substrate material.