Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials

DS 35.56: Poster

Mittwoch, 2. April 2014, 17:00–20:00, P1

Proton Beam Writing in p-GaAs and controlled subsequent electrochemical etching to create 3D structures for MEMS applications — •Charlotte Rothfuchs, Tristan Koppe, Ulrich Vetter, and Hans Hofsäss — 2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

Recently, 3D structuring with Proton Beam Writing was demonstrated [1] and especially in combination with a variation of the irradiation fluence it has been shown to be a promising lithographic technique for semiconductors [2].

In order to create 3D structures with well-defined feature heights, we simulated the electrochemical etching process of irradiated p-GaAs with finite element simulations. The FEM simulations make use of Monte-Carlo simulations of the recoil distribution and implantation isolation data [3]. Based on those theoretical results it is possible to fabricate free-standing or undercutted structures in a controlled way. The fabrication is work in progress on which we are going to present latest results.

[1] J.A. van Kan et al., Appl. Phys. Lett. 83 (2003) 1629.

[2] M. Schulte-Borchers , U. Vetter, T. Koppe, H. Hofsäss, J. Micromech. Microeng. 22 (2012) 025011.

[3] H. Boudinov, A. V. P. Coelho, J. P. de Souza, Journal of Applied Physics 91(10) (2002) 6585