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DS: Fachverband Dünne Schichten
DS 35: Poster I: Application of thin films; Focus session: Sensoric micro and nano-systems; Focus Session: Sustainable photovoltaics with earth abundant materials; Graphen (joint session with TT; MA; HL; DY; O); Ion and electron beam induced processes; Layer properties: electrical, optical, and mechanical properties; Magnetic/organic interfaces, spins in organics and molecular magnetism; Micro- and nanopatterning (jointly with O); Organic electronics and photovoltaics (jointly with CPP, HL, O); Thermoelectric materials
DS 35.62: Poster
Mittwoch, 2. April 2014, 17:00–20:00, P1
Infrared spectroscopic study of molecular orientation and interaction in emitter systems for blue organic light emitting diodes — •David Gerbert1,2,3, Tobias Glaser1,2, Sebastian Beck1,2, Christian Lennartz1,4, and Annemarie Pucci1,2,5 — 1Kirchhoff-Institut für Physik, Heidelberg, Germany — 2InnovationLab GmbH, Heidelberg, Germany — 3Institut für Physikalische Chemie, Heidelberg, Germany — 4BASF SE, Ludwigshafen, Germany — 5Center of Advanced Materials, Heidelberg, Germany
In this study, two emitter systems for blue phosphorescent organic light emitting diodes were investigated by means of infrared spectroscopy. Thin layers of the single materials as well as doped layers have been achieved by evaporation under ultrahigh vacuum conditions. By performing angle-dependant measurements, a preferred molecular orientation has been found for the pure layer of the blue phosphorescent emitter material Ir(dbfmic)3. Such a preferred orientation could not be observed in thin films of the related emitter material Ir(dpbic)3, which can be explained by mutual screening of possible hydrogen bonds by the molecules’ ligands themselves. Doping thin films of the matrix material SiDBF with different amounts of Ir(dbfmic)3 leads to small changes in the vibrational spectra with respect to the spectra of the single materials. These spectral changes are probably arising due to van-der-Waals forces and serve as a measure for the interface area between SiDBF and Ir(dbfmic)3 in the doped layers.