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DS: Fachverband Dünne Schichten
DS 39: Focus Session: Resistive Switching by Redox and Phase Change Phenomena VI (Kinetics and Transport in PC materials)
DS 39.6: Vortrag
Donnerstag, 3. April 2014, 11:00–11:15, CHE 89
Disorder Induced Localization in Crystalline Phase Change Materials: Sn1Sb2Te4 as a Model System — •Tobias Schäfer1, Hanno Volker1, Felix vom Bruch1, Artur Romanov1, Stefan Jakobs1, Felix Lange1, and Matthias Wuttig1,2 — 1I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany — 2JARA FIT, RWTH Aachen University
The electrical resistivity of the crystalline phase of many phase-change materials (PCMs) can be reduced by several orders of magnitude via annealing. This annealing effect can be attributed to the reduction of disorder in the material, which is initially exceptionally high in most PCMs and therefore dominating the transport. Disorder-dominated transport is a key feature of most PCMs due to their low electron correlation, while most other semiconductors and semimetals feature both disorder and correlation effects (Mott-Anderson-physics).
While previous studies on disorder-dominated transport in PCMs have been mostly conducted on Ge1Sb2Te4 and other materials on the pseudobinary line between GeTe and Sb2Te3 [1,2], this study focuses on the isoelectronically replaced Sn1Sb2Te4 to emphasize the universality of disorder-dominated transport in PCMs. Low-temperature transport and magneto-transport measurements are utilized to analyze the influence of disorder in PCMs.
[1] T. Siegrist et al., Nat. Mater. 10, 202 (2011)
[2] N.P. Breznay et al., Phys. Rev. B 86, 205302 (2012)