DS 39: Focus Session: Resistive Switching by Redox and Phase Change Phenomena VI (Kinetics and Transport in PC materials)
Donnerstag, 3. April 2014, 09:30–11:15, CHE 89
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09:30 |
DS 39.1 |
Hauptvortrag:
Switching kinetics in phase change materials — •Martin Salinga
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10:00 |
DS 39.2 |
Growth of GeTe/Sb2Te3 Superlattices by Molecular Beam Epitaxy — •Rui Ning Wang, Jos Boschker, Raffaella Calarco, Jamo Momand, and Bart Kooi
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10:15 |
DS 39.3 |
Phase-Change Materials: Impact of Disorder on Thermal and Electrical Transport — •Karl Simon Siegert, Felix Lange, and Matthias Wuttig
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10:30 |
DS 39.4 |
Drift of the voltage dependence of resistance in melt-quenched phase change memory cells — •Martin Wimmer, Matthias Kaes, and Martin Salinga
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10:45 |
DS 39.5 |
Structure and Transport Properties of Pseudo Ternary SnTe, GeTe, Sb2Te3 Chalcogenides — •Felix R. L. Lange, Stefan Jakobs, Tim Labohm, Jan Kirchhof, Tobias Schäfer, K. Simon Siegert, and Matthias Wuttig
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11:00 |
DS 39.6 |
Disorder Induced Localization in Crystalline Phase Change Materials: Sn1Sb2Te4 as a Model System — •Tobias Schäfer, Hanno Volker, Felix vom Bruch, Artur Romanov, Stefan Jakobs, Felix Lange, and Matthias Wuttig
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