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DS: Fachverband Dünne Schichten

DS 4: Magnetic / Organic Interfaces, Spins in Organics and Molecular Magnetism (jointly with MA)

DS 4.5: Vortrag

Montag, 31. März 2014, 16:15–16:30, CHE 91

Vertical organic spin-valves with sub-micrometer lateral dimensions — •Robert Göckeritz¹, Bodo Fuhrmann², Nico Homonnay¹, Tim Richter¹, Alexander Müller¹, and Georg Schmidt^1,2 — ¹Inst. f. Physik, FG Nanostrukturierte Materialien, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale) — ²Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg, Halle (Saale)

To get a deeper insight to the underlying physics of spin transport in vertical organic spin-valve devices a promising approach is to go to smaller active device areas. A new fabrication process is presented which offers the possibility to achieve active device areas less than 100nm and which is flexible in terms of material choice for the active layers. As proof of principle magnetoresistance measurements of devices are shown with a large active area of 200x100 micrometer as well as scaled-down device with dimensions of about 500 nm using the organic semiconductor AlQ3 and LSMO and cobalt as ferromagnetic electrodes.