Dresden 2014 – scientific programme
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DS: Fachverband Dünne Schichten
DS 4: Magnetic / Organic Interfaces, Spins in Organics and Molecular Magnetism (jointly with MA)
DS 4.6: Talk
Monday, March 31, 2014, 16:30–16:45, CHE 91
Resistive switching in organic TAMR devices — •Matthias Grünewald, Nico Homonnay, Johannes Kleinlein, and Georg Schmidt — Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Von-Danckelmann-Platz 3, 06120 Halle
Resistive switching (RS), i.e. the remanent (reversible) change of a device’s resistance, is a widely investigated phenomenon as it holds the prospect for realizing high density memory devices. A lot of reports are available in the literature showing results for metal-insulator-metal structures where the insulating layer (often an oxide, rarely an organic semiconductor) is modified and hence the resistance changed. Especially for the oxide based devices a lot of models exist explaining the physics behind the effect. They are prevalently emphasizing the role of oxygen stoichiometry in these materials for their physical properties.
Here we present results showing RS in organic tunneling anisotropic magnetoresistance (TAMR) devices, in which one electrode is a complex oxide (La0.7Sr0.3MnO3) and the organic semiconductor tris-(8-hydroxyquinoline) aluminium (AlQ3) is used. In contrast to similar studies that demonstrate an interplay of RS and a magnetoresistance effect (MR), the latter is unambiguously identifiable as TAMR in the present devices and allows for probing the tunnel barrier between the oxide electrode and the AlQ3 layer. This barrier is found to be changed during RS. In order to analyze the RS dynamics the barrier’s modification is determined by employing I/V characterization and appropriate fitting procedures in several experiments.