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DS: Fachverband Dünne Schichten

DS 4: Magnetic / Organic Interfaces, Spins in Organics and Molecular Magnetism (jointly with MA)

DS 4.9: Vortrag

Montag, 31. März 2014, 17:15–17:30, CHE 91

Fermi level engineering in organic semiconductors for controlled manufacturing of charge and spin transfer materials — •Rico Friedrich^1,2, Berthold Kersting³, and Jens Kortus¹ — ¹Institute of Theoretical Physics, TU Bergakademie Freiberg, Leipziger Str. 23, D-09596 Freiberg, Germany — ²Present address: Peter Grünberg Institut and Institute for Advanced Simulation, Forschungszentrum Jülich, D-52425 Jülich, Germany — ³Institut für Anorganische Chemie, Universität Leipzig, Johannisallee 29, D-04103 Leipzig, Germany

The rational design of materials for organic electronics and spintronics has been a long-standing challenge. In this presentation it will be demonstrated by theoretical means how to achieve Fermi level engineering in an organic semiconductor like for instance a metal phthalocyanine. It turns out that substitution of the peripheral hydrogen atoms by either fluorine atoms or methoxy groups allows to tune the Fermi level by about 1.5 eV [1]. Finally, we show how such tuning could be exploited to achieve a systematic way to manufacture charge and spin transfer materials by studying the system (MeO)₈CoPc/F₁₆CoPc and compare its electronic and magnetic properties to the first representative of this materials class namely MnPc/F₁₆CoPc [2].

[1] R. Friedrich, B. Kersting, and J. Kortus, Physical Review B 88, 155327 (2013).

[2] S. Lindner, M. Knupfer, R. Friedrich, T. Hahn, and J. Kortus, Physical Review Letters 109, 027601 (2012).