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DS: Fachverband Dünne Schichten

DS 41: Focus Session: Sustainable Photovoltaics with Earth Abundant Materials II

DS 41.7: Vortrag

Donnerstag, 3. April 2014, 16:30–16:45, CHE 91

High Vapour Pressure Selenization and Grain Growth Mechanisms of Sulfide-CZTS Precursors — •Justus Just¹, Steffen Kretzschmar¹, Stephan van Duren¹, Roland Mainz¹, Claudia Coughlan², Kevin Ryan², and Thomas Unold¹ — ¹Helmholtz-Zentrum Berlin für Materialien und Energie — ²University of Limerick, Irland

We report about the fundamental growth mechanisms and properties of CZTS,Se absorber layers, produced by selenization of various different precursors at high selenium partial pressures deposited in vacuum as well as in non-vacuum processes. We will compare the selenization and growth mechanisms of precursors consisting of PVD-deposited CZTS at low temperature, CZTS nanoparticles and wurzite CZTS nanorods. Samples are characterized by scanning electron microscopy, depth resolved elemental analysis (energy dispersive X-ray fluorescence) and X-ray diffraction. In order to estimate the electronic quality of the selenized material, photoluminescence measurements are carried out additionally. While the selenization is similar depending on the temperature and selenium partial pressure for different types of precursors, the grain growth mechanisms are found to be substantially different, as the grain growth is depending on nucleation and interdiffusion of cations.