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DS: Fachverband Dünne Schichten
DS 42: Thermoelectric Materials
DS 42.5: Vortrag
Donnerstag, 3. April 2014, 16:00–16:15, CHE 89
Full ZT and Crystallographic Characterization of Individual Bismuth Telluride Nanowires — •Danny Kojda1, Rüdiger Mitdank1, Anna Mogilatenko2, William Töllner3, Zhi Wang4, Michael Kröner4, Peter Woias4, Kornelius Nielsch3, and Saskia F. Fischer1 — 1AG Neue Materialien, Humboldt-Universität zu Berlin, D-10099 Berlin — 2Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, D-12489 Berlin — 3Institut für Angewandte Physik, Universität Hamburg, D-20355 Hamburg — 4Laboratory for Design of Microsystems, University of Freiburg - IMTEK, D-79110 Freiburg
Thermoelectrical properties of nanowires (NWs) have been investigated because of their potential in energy conversion. In order to determine the thermoelectric figure of merit ZT of NWs, individual electrochemically grown bismuth telluride (Bi2Te3) NWs [1] are transferred to a micro device (TNCP)[2] and contacted using electron beam induced deposition (EBID) of platinum. The TNCP design allows a complete thermoelectric characterization and structural and compositional analysis by transmission electron microscopy (TEM) for the same NW.
We measured the electrical and thermal conductivity λ (3ω-method) as well as the Seebeck coefficient for an individual Bi2Te3 NW at room temperature. These measurements give λ = 0.8 W/(mK) and ZT ≈ 0.1. TEM measurements reveal a textured crystal orientation preserved along the whole NW and a rough surface morphology.
W. Töllner et al., Adv. Func. Mater. 22, 151 (2012)
Z. Wang et al., IEEE 26th Intern. Conf. on MEMS 2013, pp. 508.