Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 43: Poster II: Organic thin films; Atomic layer deposition, Thin film characterization: Structure analysis and composition (XRD, TEM, XPS, SIMS, RBS, ...)

DS 43.10: Poster

Thursday, April 3, 2014, 16:00–19:00, P1

PS-b-PMMA block copolymer films: Self-assembly and dielectric properties on different substrates — •Riitta Savikoski^{1, 2}, Guillaume Fleury², Andrea Gassmann¹, Georges Hadziioannou², and Heinz von Seggern¹ — ¹Electronic Materials Division, Institute of Materials Science, Technische Universität Darmstadt, Alarich-Weiss-Str. 2 , 64287 Darmstadt, Germany — ²Laboratoire de Chimie des Polymères Organiques, Université Bordeaux 1, Bât 8, Avenue des Facultés, 33405 Talence cedex, France

The self-assembly of block copolymers (BCPs) on Si-substrates has been widely investigated. The present work aims using self-assembled BCP films as gate dielectric in bottom gate organic field-effect transistors and evaluating in how far the morphology of the film influences the performance of the device. Nowadays silicon is not the material of choice for the gate electrode any more. Instead, metals or ITO are common materials. The BCP under investigation is polystyrene-block-poly(methyl methacrylate) (PS-b-PMMA). PS-b-PMMAs, with molar ratios of 1:1 and 2:1, were self-assembled on different gate electrode materials, including gold, silver, ITO and Si-substrates as a reference. A vertical orientation of BCP films was achieved on oxidized Si-substrates by adding a brush layer of random BCP (PS-r-PMMA). However, this vertical orientation can also be achieved through a nanometer scale surface roughness. The success of self-assembly was studied for spin coated films using atomic force microscopy (AFM). Furthermore, dielectric properties of the films were investigated by impedance measurements.