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DS: Fachverband Dünne Schichten

DS 43: Poster II: Organic thin films; Atomic layer deposition, Thin film characterization: Structure analysis and composition (XRD, TEM, XPS, SIMS, RBS, ...)

DS 43.18: Poster

Donnerstag, 3. April 2014, 16:00–19:00, P1

Crystalline phase formation during the atomic layer deposition of TiO₂ — •Barbara Abendroth, Solveig Rentrop, Theresa Moebus, Hartmut Stöcker, and Dirk C. Meyer — Institut für Experimentelle Physik, TU Bergakademie Freiberg, Germany

Titanium dioxide is a wide gap semiconductor and is, based on its optical and electronic properties, widely used in various applications. For its use as thin dielectric layer in microelectronic data storage or in electrochemical energy storage devices, TiO₂ is commonly produced by atomic layer deposition (ALD). In this work we present the deposition of TiO₂ thin films by ALD from tetrakis(dimethylamino) titanium and water on silicon and polycrystalline TiN substrates for the use in metal - insulator - metal resistive switching random access memory cells. For this application, amorphous TiO₂ layers are desirable to minimize leakage currents, however, other applications of TiO₂ layers, such as a high k dielectric or photocatalysis require crystalline structures of either rutile or anatase polymorph. For our ALD process, we find a dependence of crystallisation of anatase and rutile on deposition temperature and layer thickness. A survey of literature data on TiO₂ ALD based on various precursors, shows that our results are representative for thermal ALD of TiO₂ on silicon substrates and can be summarized in a general thickness - temperature - phase diagram.