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DS: Fachverband Dünne Schichten

DS 43: Poster II: Organic thin films; Atomic layer deposition, Thin film characterization: Structure analysis and composition (XRD, TEM, XPS, SIMS, RBS, ...)

DS 43.22: Poster

Donnerstag, 3. April 2014, 16:00–19:00, P1

Al-doped zinc stannate thin films as amorphous transparent conductive oxides prepared by reactive DC magnetron sputtering — •Roland Sittner, Rüdiger Matti Schmidt, and Matthias Wuttig — I. Physikalisches Institut (IA), RWTH Aachen University, 52056 Aachen, Germany

Transparent conductive oxides (TCOs) combine the contrary material properties of low electrical resistivity and high optical transparency. Indium tin oxide and aluminum doped zinc oxide are widely used in optoelectronic devices such as photovoltaic modules and flat panel displays. Amorphous TCOs, like indium gallium zinc oxide and zinc stannate, are utilized as channel material in transparent thin film transistors. The most common stoichiometries of the Zn_xSn_yO_z system are ZnSnO₃ and Zn₂SnO₄, with the latter possessing a lower electrical conductivity in the amorphous state.

In this work, we deposited aluminum doped Zn_xSn_yO_z thin films with a high Zn to Sn ratio via reactive DC magnetron sputtering. Doping occurred in a serial co-deposition process in order to obtain films with improved electrical properties compared to undoped zinc tin oxide films. The process parameters and dopant concentrations were varied to deposit films with optimized properties. The electrical, optical and structural properties were determined via van der Pauw method, UV/Vis spectroscopy and X-ray diffraction.