Dresden 2014 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena
DS 44.1: Poster
Donnerstag, 3. April 2014, 16:00–19:00, P1
Memristive operation mode of floating gate transistors for neuromorphic applications — •Martin Ziegler1, Dietmar Schroeder2, Wolfgang Krautschneider2, and Hermann Kohlstet1 — 1Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, 24143 Kiel, Germany — 2Technische Universität der Hamburg-Harburg, Institut für Nanoelektronik, Hamburg, Germany
A memristive operation mode of a single floating gate transistor (MemFlash-cell) is presented. To ensure the memristive operation mode, the three-terminal device is reduced to a two-terminal device in such a way that the device resistance varied accordingly to the charge flow through the device during source-drain voltage application. In particular, we provide evidence that the MemFlash-cell can be used to mimic synaptic functionality. Furthermore, based on Hebbian learning, a synaptic analytical expression for the learning rate of this device is derived. The experimental findings are theoretically supported by a capacitive based model. The presented two-terminal MemFlash-cell can be considered as a potential substitute for any memristive device in neuromorphic circuits, cross bar arrays, or reconfigurable logics, and is compatible with state-of-the-art Si-fabrication technology. --- [1] Ziegler, M., Kohlstedt, H., JOURNAL OF APPLIED PHYSICS 114, 194506 (2013). [2] Ziegler, M.; Oberlaender, M.; Schroeder, D.; et al., APPLIED PHYSICS LETTERS 101, 263504 (2012).