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DS: Fachverband Dünne Schichten

DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena

DS 44.10: Poster

Thursday, April 3, 2014, 16:00–19:00, P1

Chemical investigation of buried active layers in resistive switching materials by hard x-ray photoemission electron microscopy (HAXPEEM) — •Christoph Schmitz¹, Marten Patt¹, Carsten Wiemann¹, Alexandra von der Heiden², Manfred Martin², Andrei Gloskovskii³, Wolgang Drube³, and Claus M. Schneider^1,4 — ¹Peter Grünberg Institut PGI-6, FZ Jülich, Jülich, Germany — ²Institute of Physical Chemistry, Aachen, Germany — ³Deutsches Elektronen-Synchroton DESY, Hamburg, Germany — ⁴Fakultät f. Physik and Center for Nanointegration Duisburg-Essen (CeNIDE), Duisburg, Germany

Energy filtered photoemission electron microscopy (EF-PEEM) offers a lot of valuable insights into chemically driven processes at surfaces. In our work we want to apply this method to resistive switching materials to understand the origin of the different resistive states of such materials by investigating changes of band structure, chemical bonding and composition. However, devices based on resistive switching materials are commonly designed in layered structures where the active material is buried beneath a metal top electrode and usually not accessible by conventional photoemission techniques due to their high surface sensitivity. Here we present a way to increase the probing depth of EF-PEEM up to several nm in a non-destructive manner by using hard x-ray photons (hν=6550eV). Advantages and limitations of this method will be discussed on the basis of recent data of GaOx-based resistive switching devices and a Cr/Au/Si wedge sample collected at PETRA III Beamline P09.