Dresden 2014 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

DS: Fachverband Dünne Schichten

DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena

DS 44.14: Poster

Thursday, April 3, 2014, 16:00–19:00, P1

Sputter Deposited Chalcogenide Superlattices (CSL) for Energy Efficient Data Storage — •Felix R. L. Lange¹, Enrico Varesi², Andrea Redaelli², Luigi Avaro², Jamo Momand³, Bart J. Kooi³, Stefan Jakobs¹, and Matthias Wuttig^1,4 — ¹1. Physikalisches Institut (IA), RWTH Aachen University, Germany — ²Micron Semiconductor Italia, Process R&D, Agrate Brianza, Italy — ³Zernike Institute for Advanced Materials, University of Groningen, The Netherlands — ⁴JARA - FIT, RWTH Aachen, Germany

Phase change materials (PCM) are a unique sub-class of chalcogenides where both, an amorphous and a crystalline state are stable at ambient conditions. Since the phase transition can proceed on a nanosecond timescale PCM are already exploited in rewritable optical data storage solutions (CD-RW, Blu-ray-RW) and first solid state memories are commercially available. The phase transition in both cases is induced via melt quenching and crystallizing of the material, respectively. Only recently a very different mechanism was proposed for highly textured multilayers of GeTe and Sb₂Te₃. Here, a change of the coordination number of Ge atoms at the interface was argued to be responsible for the pronounced electrical contrast between these two states [1]. These superlattices furthermore exhibit rather low switching powers as compared to ordinary PCM which makes this novel stack design highly valuable for future ’green’ data storage solution. Here we explore the feasibility to grow highly textured thin alternating layers of GeTe and Sb₂Te₃ using DC magnetron sputter deposition.
R. E. Simpson et al., Nat. Nanotechnol. 6, 501-505 (2011)