Dresden 2014 – scientific programme

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DS: Fachverband Dünne Schichten

DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena

DS 44.16: Poster

Thursday, April 3, 2014, 16:00–19:00, P1

Textured growth of pulsed laser deposited Ge2Sb2Te5 thin films — •Erik Thelander, Ulrich Ross, Xinxing Sun, Andriy Lotnyk, and Bernd Rauschenbach — Leibniz Institute of surface modification, Leipzig, Germany

Phase change materials based on the material system Ge-Sb-Te have been widely used for optical storage for decades and are gaining more interest as a candidate for storage class memory. Pulsed laser deposition (PLD) is a deposition method with hyper-thermal species that could have a large influence on the film and crystal growth and hence also on the phase change properties. Although a number of groups have studied PLD-deposited phase change films, until now no investigations of the growth of the material has been presented. This investigation show that it possible to synthesize high quality thin films of Ge2Sb2Te5 using a stoichiometric compound target and a pulsed laser deposition process. X-ray diffraction (T-2T, RC and pole figure measurements) was employed to determine the crystalline quality of the samples and selected samples was investigated with HRSTEM using a probe corrected FEI Titan* G2 60-300kV transmission electron microscope. As substrates, HF-dipped Si (100) and freshly cleaved KCl (100) have been used. Thermally annealed as-deposited films show a polycrystalline nature whereas films that are deposited at elevated temperature show a preferred 111-growth direction independent of substrate. This could have implications for the switching behavior of the material and for further studies on epitaxial growth.