Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena

DS 44.19: Poster

Donnerstag, 3. April 2014, 16:00–19:00, P1

Nanodiffraction and fluctuation electron microscopy of phase-change material — Manuel Bornhöfft^{1, 2}, Paul Voyles³, Tobias Saltzmann⁴, •Ulrich Simon⁴, and Joachim Mayer^{1, 2} — ¹Gemeinschaftslabor für Elektronenmikroskopie, RWTH Aachen University, Ahornstraße 55, 52074 Aachen, Germany — ²Ernst Ruska-Centre, FZ Jülich and RWTH Aachen, Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — ³Department of Materials Science and Engineering, University of Wisconsin, Madison, Madison, Wisconsin 53706, USA — ⁴Institute of Inorganic Chemistry and JARA - Fundamentals of Future Information Technology, RWTH Aachen University, Landoltweg 1, 52074, Aachen, Germany

We studied phase-change materials in a scanning transmission electron microscopy (STEM) dedicated Titan transmission electron microscope (TEM) by nanodiffraction and fluctuation electron microscopy. In both techniques the samples are investigated by a coherent and parallel electron probe in the nanometer scale by STEM. This is in contrast to the normal STEM, which is executed with a convergent beam. The coherent and parallel illumination enables us to image the diffraction patterns of probe size (1-11nm) limited regions. Nanodiffraction is used to get nanometer scale information of the phase of phase-change materials and its structures. Fluctuation electron microscopy is sensitive to the medium-range order of materials. The grade of order can influence the crystallization kinetics of the materials, which are important for the application as memories.