Dresden 2014 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena
DS 44.20: Poster
Donnerstag, 3. April 2014, 16:00–19:00, P1
Resistive Switching Properties of Chemically Synthesized Metal Oxide and Higher Chalcogenide Nanoparticles — •Tobias Saltzmann1, Oliver Schmidt1, Michael Noyong1, and Ulrich Simon1,2 — 1Institut für Anorganische Chemie, RWTH Aachen University, 52074 Aachen, NRW, Germany — 2JARA - Fundamentals of Future Information Technologies
We apply chemical approaches for the fabrication of metal oxide and higher chalcogenide nanoparticles (NPs) as resistively switching nanostructures. By varying size, crystallinity, morphology as well as composition, we aim to explore structure-composition-property relations.
As a model phase change material we studied the narrow band gap semiconductor Sb2Te3. Its highly anisotropic crystal structure consists of quintuple Te Sb Te Sb Te layer stacks, with covalent bonding in ab-, but v. d. Waals bonding in c-direction. Synthesized via a solvothermal route, Sb2Te3 is formed as single crystalline hexagonal platelets (HPs) with sizes of 1 to 10 *m in ab-direction and with a few tens up to 250 nm in c-direction. We electrically addressed single HPs in situ in a SEM in ab- and c-direction, respectively, and monitored switching between two differently conducting states in both directions.
As model valence change material we synthesized TiO2. Via a sol-gel process amorphous TiOx NPs are formed and subsequently calcined to form crystalline TiO2. To study the influence of defect concentration and crystallinity on the resistive switching behavior, amorphous as well as NPs calcined in oxidizing or reducing environments are electrically characterized in situ in a SEM.