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DS: Fachverband Dünne Schichten
DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena
DS 44.21: Poster
Donnerstag, 3. April 2014, 16:00–19:00, P1
Simulation of nucleation and growth in crystallization of phase change metrials — •Fatemeh Tabatabaei1, Markus Apel2, and Efim Brener1 — 1Peter Grünberg Institut (PGI-2), Forschungszentrum Jülich, 52428, Jülich — 2Access e.V., RWTH Aachen, 52072 Aachen
Chalcogenide materials like GeSeTe and AgInSbTe showing phase change properties suitable for the use in non-volatile rewritable memory devices. Their crystallization mechanism in the course of switching is known to be nucleation dominated or growth dominated, respectively [1]. The phase field simulation technique is applied in order to study crystallization of the amorphous state to the crystalline state. We extended our work by adding a nucleation model to the simulation of crystallization. The impact of different model parameter like critical radius for nucleation or maximum nucleation frequency has been investigated as a function of process parameter, e.g. the substrate temperature, for non-isothermal and transient conditions. Results of the simulations are grain size, temperature evolution and the crystallization rate.
Raoux S. and Wuttig M., (2010) Phase Change Materials, Science and Application, New York, NY: Springer