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DS: Fachverband Dünne Schichten
DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena
DS 44.4: Poster
Donnerstag, 3. April 2014, 16:00–19:00, P1
Switching processes induced by partial joule heating in vanadium dioxide two-terminal devices — •Danilo Bürger1, Varun John1, Kerstin Bernert2, György Kovacs2, Ilona Skorupa2, Oliver Schmidt3, and Heidemarie Schmidt1 — 1Material Systems for Nanoelectronics, Chemnitz University of Technology — 2Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf — 3Institute for Integrative Nanosciences, IFW Dresden
Vanadium dioxide thin films with the reversible semiconductor-metal phase transition at the thermochromic switching temperature of around 340 K have been prepared by pulsed laser deposition on (0001)-sapphire substrates. We fabricated different two-terminal devices and measured the switching properties by time domain reflectometry as well as switching with a pulse generator. We find repeatable switching behavior for billions of voltage pulses and switching times shorter than 50 ns by using a pulse generator. After measurements with time domain reflectometry at higher voltage amplitudes, we observe a local degredation of VO2 between the two metallic contacts. We think that the inhomogenous electrical fields in the VO2-structure due to the used conventional contact geometry lead to the local degredation. The main consequence is a partial switching due to local joule heating. This is in contradiction with the often used assumption of the homogenous switching of the complete volume of VO2 in two-terminal devices [1]. [1] Y. Zhou et al., Electron Device Letters, IEEE 34, 220 (2013)