Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena

DS 44.5: Poster

Donnerstag, 3. April 2014, 16:00–19:00, P1

Thermal stability of VO₂ — •Marcel Hopfe¹, Jura Rensberg¹, Sebastian Vatterodt¹, You Zhou², Shriram Ramanathan², György J. Kovàcs³, Ilona Skorupa³, Heidemarie Schmidt⁴, and Carsten Ronning¹ — ¹Institute for Solid State Physics, Friedrich Schiller University Jena — ²School of Engineering and Applied Sciences, Harvard University — ³Helmholtz-Zentrum Dresden-Rossendorf — ⁴Material Systems for Nanoelectronics, Technical University Chemnitz

Pure vanadium dioxide (VO₂) has a totally reversible metal-insulator transition (MIT) at about 68^∘C, making it very interesting for photonic and electric applications. It is known that doping reduces the MIT-temperature. One possibility to dope VO₂ thin films is ion implantation. Lattice defects are introduced during ion irradiation, worsening the MIT properties and making annealing indispensable. Thus, our aim was to investigate the thermal stability of VO₂ at a base pressure of around 10⁻⁶ mbar. The low pressure is necessary for the ion beam doping process. VO₂ thin films were annealed at temperatures ranging from 100^∘C to 600^∘C. All samples were optically and electrically characterised in order to investigate possible changes of MIT properties. With increasing annealing temperature the MIT at 68^∘C vanishes. This is due to oxygen outdiffusion causing a reductoin of VO₂ towards V₂O₃. Same experiments at higher base pressures show, that oxygen outdiffusion can be prevented. Additionally, post-implantation annealing of irradiated VO₂ thin films will be discussed on the poster.