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Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena

DS 44.6: Poster

Donnerstag, 3. April 2014, 16:00–19:00, P1

Growth and characterization of free-standing VO2 nanowiresMatthias Ogrisek, •Tim Barth, Jura Rensberg, and Carsten Ronning — Institut für Festkörperphysik Friedrich Schiller Universität Jena

Recently, Vanadium dioxide has attracted much attention because of its "metal to insulator transition (MIT)" at ≈68C. This transition causes a significant change of the electrical and optical properties, allowing applications like sensing or switching. The growth of high-quality VO2 films is challenging due to stress caused by different thermal expansion coefficients and a lattice mismatch between the film and the substrate. For this reason the growth of VO2 nanowires (NW’s) is of particular interest, because stress can quickly relax laterally in NW’s. The aim of our study was to grow free-standing VO2 NW’s. The wires have been grown in a 3-zone tube furnace utilizing Vapor-Solid (VS) growth. VO2 powder was placed in an alumina boat and heated up to 1325 K to evaporate. The vapor was transported to the substrate by an argon gas flow and grew the wires by self alignment. In-plane grown wires had a length of 200 µm and a diameter of 1-2 µm. Out of plane growth of the nanowires has been achieved by using r-plane sapphire substrates but caused a decrease of the wirelength to 10 µm. EDX-spectrometry revealed only vanadium and oxygen signals and the Raman spectrum measured at RT confirmed the VO2 nature of the nanowires.

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