Dresden 2014 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 44: Poster III: Focus session: Resistive switching by redox and phase change phenomena

DS 44.7: Poster

Donnerstag, 3. April 2014, 16:00–19:00, P1

Resistive switching characteristics of Pr_0.48Ca_0.52MnO₃ heterostructures — •Benedikt Arndt¹, Anja Herpers¹, Christian Lenser¹, Regina Dittmann¹, and Rainer Waser^1,2 — ¹Peter Grünberg Institut, Forschungszentrum Jülich GmbH, Jülich, 52425, Germany — ²Institut für Werkstoffe der Elektrotechnik II, RWTH Aachen University, Aachen, 52074,Germany

Resistive random access memory (RRAM), which is based on hysteretic resistive switching in transition-metal oxides, is believed to be a promising candidate for high-density nonvolatile memory. It has been demonstrated for many oxides, that the resistive switching and its related redox processes take place in a spatially restricted filament region. In contrast, it has been demonstrated that the currents from high and low resistive states in praseodymium calcium manganate (PCMO) RRAM cells scale with the electrode area. The underlying mechanisms in these systems have not yet been fully understood.

We could experimentally prove that resistive switching in PMCO/Ti heterostructures is based on a redox-process, which mainly happens on the side Ti of the PCMO/Ti interface. In particular, the amount of fully oxidized Ti-ions determines the thickness of the insulating TiO₂ tunnel barrier, which forms at this interface.

Furthermore, we compare these devices to cells which comprise an yttria stabilized zirkonia (YSZ) layer at the interface of PCMO and platinum top electrodes. The YSZ is intended as an artificial tunnel barrier whose properties can be influenced by the deposition process. This extra layer allows further to tune the device properties.