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16:00 |
DS 44.1 |
Memristive operation mode of floating gate transistors for neuromorphic applications — •Martin Ziegler, Dietmar Schroeder, Wolfgang Krautschneider, and Hermann Kohlstet
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16:00 |
DS 44.2 |
High resolution electrocoloration study of Fe:STO single crystals — •Viktor Havel, Astrid Marchewka, Stephan Menzel, Susanne Hoffmann-Eifert, and Rainer Waser
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16:00 |
DS 44.3 |
The importance of local temperture for the SET kinetics in valence change memories — •Karsten Fleck, Stephan Menzel, Ulrich Böttger, and Rainer Waser
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16:00 |
DS 44.4 |
Switching processes induced by partial joule heating in vanadium dioxide two-terminal devices — •Danilo Bürger, Varun John, Kerstin Bernert, György Kovacs, Ilona Skorupa, Oliver Schmidt, and Heidemarie Schmidt
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16:00 |
DS 44.5 |
Thermal stability of VO2 — •Marcel Hopfe, Jura Rensberg, Sebastian Vatterodt, You Zhou, Shriram Ramanathan, György J. Kovàcs, Ilona Skorupa, Heidemarie Schmidt, and Carsten Ronning
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16:00 |
DS 44.6 |
Growth and characterization of free-standing VO2 nanowires — Matthias Ogrisek, •Tim Barth, Jura Rensberg, and Carsten Ronning
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16:00 |
DS 44.7 |
Resistive switching characteristics of Pr0.48Ca0.52MnO3 heterostructures — •Benedikt Arndt, Anja Herpers, Christian Lenser, Regina Dittmann, and Rainer Waser
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16:00 |
DS 44.8 |
Oxygen-vacancy behavior in strontium titanate — •Marcel Schie, Roger A. De Souza, and Rainer Waser
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16:00 |
DS 44.9 |
Influence of Au-nanoparticles on the resistive switching properties of SrTiO3 thin films — •Nicolas Raab, Oliver Schmidt, Ulrich Simon, and Regina Dittmann
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16:00 |
DS 44.10 |
Chemical investigation of buried active layers in resistive switching materials by hard x-ray photoemission electron microscopy (HAXPEEM) — •Christoph Schmitz, Marten Patt, Carsten Wiemann, Alexandra von der Heiden, Manfred Martin, Andrei Gloskovskii, Wolgang Drube, and Claus M. Schneider
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16:00 |
DS 44.11 |
Spectroscopic investigations of resistively switching Ta2O5−x thin films — •Oliver Peters, Katharina Skaja, Christoph Bäumer, Regina Dittmann, and Rainer Waser
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16:00 |
DS 44.12 |
TaOx based memristive systems with variable oxygen concentration — •Stefan Niehörster, Savio Fabretti, Markus Schäfers, and Andy Thomas
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16:00 |
DS 44.13 |
Setup for optical switching of single antenna resonances in the mid-infrared using phase-change materials — •Thomas Kalix, Ann-Katrin Ursula Michel, Martin Salinga, and Thomas Taubner
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16:00 |
DS 44.14 |
Sputter Deposited Chalcogenide Superlattices (CSL) for Energy Efficient Data Storage — •Felix R. L. Lange, Enrico Varesi, Andrea Redaelli, Luigi Avaro, Jamo Momand, Bart J. Kooi, Stefan Jakobs, and Matthias Wuttig
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16:00 |
DS 44.15 |
Analysis of the switching behaviour of Phase Change Materials using s-SNOM — •Martin Lewin, Benedikt Hauer, Ann-Katrin U. Michel, and Thomas Taubner
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16:00 |
DS 44.16 |
Textured growth of pulsed laser deposited Ge2Sb2Te5 thin films — •Erik Thelander, Ulrich Ross, Xinxing Sun, Andriy Lotnyk, and Bernd Rauschenbach
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16:00 |
DS 44.17 |
Laser-induced phase transitions of PLD-deposited GeTe films — •Xinxing Sun, Erik Thelander, Hongbing Lu, Jürgen W. Gerlach, and Bernd Rauschenbach
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16:00 |
DS 44.18 |
An alternative route for crossing the metal-insulator transition in GeTe-Sb2Te3-alloys — •Annika Poitz, Hanno Volker, Peter Jost, Peter Zalden, Tobias Schäfer, and Matthias Wuttig
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16:00 |
DS 44.19 |
Nanodiffraction and fluctuation electron microscopy of phase-change material — Manuel Bornhöfft, Paul Voyles, Tobias Saltzmann, •Ulrich Simon, and Joachim Mayer
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16:00 |
DS 44.20 |
Resistive Switching Properties of Chemically Synthesized Metal Oxide and Higher Chalcogenide Nanoparticles — •Tobias Saltzmann, Oliver Schmidt, Michael Noyong, and Ulrich Simon
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16:00 |
DS 44.21 |
Simulation of nucleation and growth in crystallization of phase change metrials — •Fatemeh Tabatabaei, Markus Apel, and Efim Brener
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