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DS: Fachverband Dünne Schichten
DS 45: Poster IV: One-Dimensional Metals: Reality or Fiction
DS 45.4: Poster
Donnerstag, 3. April 2014, 16:00–19:00, P1
Tb silicide nanowires on planar and vicinal Si(001): growth and characterisation — •Stephan Appelfeller, Stefan Kuls, and Mario Dähne — Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Deutschland
Metallic nanowires are interesting not only because of their possible future applications in nanoelectronics but also because of unique one-dimensional phenomena, e.g. the Peierls instability or Luttinger liquid behavior. A model system for metallic nanowires are silicide nanowires on Si(001). Here, the growth of Tb silicide structures by molecular beam epitaxy on planar and vicinal Si(001) surfaces was studied for the first time. Submonolayer amounts of Tb were deposited at room temperature and subsequently annealed at elevated temperatures. A wire-like 2×7 reconstruction and – for coverages surpassing a critical coverage – Tb silicide nanowires were observed and analysed by scanning tunnelling microscopy. The critical coverage reduces for more structured surfaces, e.g. vicinal surfaces. At moderate annealing temperatures, the 2×7 reconstruction, which shows a strongly voltage dependant appearance, remains intact upon nanowire formation. In contrast, the 2×7 reconstruction disappears during nanowire formation at higher temperatures. The structure of the nanowires could be identified as hexagonal TbSi2. They are highly anisotropic with widths of few nanometers and lengths of several hundred nanometers and grow parallel to each other on well ordered vicinal surfaces. This work was supported by the DFG through FOR 1700 project E2.