Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

DS: Fachverband Dünne Schichten

DS 48: Topological Insulators (jointly with MA,HL,O,TT)

DS 48.4: Vortrag

Freitag, 4. April 2014, 10:15–10:30, HSZ 04

Surface and bulk contributions to the electronic structure of the topological insulator Sb₂Te₃(0001) — •Christoph Seibel^1,2, Hendrik Bentmann^1,2, Henriette Maaß^1,2, Jürgen Braun³, Jan Minár³, Kenya Shimada⁴, and Friedrich Reinert^1,2 — ¹Experimentelle Physik VII, Universität Würzburg, D-97074 Würzburg — ²Gemeinschaftslabor für Nanoanalytik, Karlsruher Institut für Technologie KIT, D-76021 Karlsruhe — ³Department Chemie, Physikalische Chemie, Universität München, Butenandtstraße 5-13, D-81377 München — ⁴Hiroshima Synchrotron Radiation Center, Hiroshima University, Higashi-Hiroshima 739-0046, Japan

Photon energy dependent angle-resolved photoemission measurements were performed to disentangle surface and bulk contributions to the electronic structure of the 3D topological insulator (TI) Sb₂Te₃. We discover a penetration of the topological surface state (TSS) into the bulk valence band regime where it coexists with bulk states without considerable hybridization. Our results indicate an emerging k_⊥-dispersion of the TSS at higher binding energies, which we attribute to an increasing bulk character. These observations deviate from previous findings for the isostructural TIs Bi₂Se₃ and Bi₂Te₃. Our results are supported by fully relativistic one-step photoemission calculations.
Seibel et al. PRB 86, 161105(R) (2012)