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DS: Fachverband Dünne Schichten

DS 48: Topological Insulators (jointly with MA,HL,O,TT)

DS 48.8: Vortrag

Freitag, 4. April 2014, 11:30–11:45, HSZ 04

Topological surface states of HgTe and Heulser compounds — •Shu-Chun Wu¹, Binghai Yan^1,2, and Claudia Felser¹ — ¹Max Planck Institute for Chemical Physics of Solids, Dresden, Germany. — ²Max Planck Institute for Physics of Complex Systems, Dresden, Germany.

We studied the topological electronic structures of HgTe and half Heusler compounds (e.g.: XYZ, X = rare earth elements, Y = trasition metal and Z = main group elements) by both ab initio calculations. The topological surface structures were investigated by the Wannier function based tight-binding method. The effects of external strains induced from the substrate and surface terminations are taken into account by the atomic positions. Our results agree well with recent photoemission experiments.